R. Nascimento, J. R. da Martins, R. J. C. Batista, and H. Chacham
, “Band Gaps of BN-Doped Graphene: Fluctuations, Trends, and Bounds
,” Journal of Physical Chemistry C
, vol. 119, no. 9, pp. 5055-5061, 2015. Publisher's Version
S. M. Manhabosco, R. J. C. Batista, S. Neves da Silva, and L. F. P. Dick
, “DETERMINATION OF CURRENT MAPS BY SVET OF HOT-DIP GALVANIZED STEEL UNDER SIMULTANEOUS STRAINING
,” Electrochimica Acta
, vol. 168, pp. 89-96, 2015. Publisher's Version
K. A. S. Araujo, et al.
, “Charge transfer between carbon nanotubes on surfaces
, vol. 7, no. 39, pp. 16175-16181, 2015. Publisher's Version
M. C. Prado, R. Nascimento, B. E. N. Faria, M. J. S. Matos, H. Chacham, and B. R. A. Neves
, “Nanometre-scale identification of grain boundaries in MoS 2 through molecular decoration
, vol. 26, no. 47, pp. 475702, 2015. Publisher's VersionAbstract
In this paper, we address the challenge of identifying grain boundaries on the molybdenum disulphide (MoS 2 ) surface at the nanometre scale using a simple self-assembled monolayer (SAM) decoration method. Combined with atomic force microscopy, octadecylphosphonic acid monolayers readily reveal grain boundaries in MoS 2 at ambient conditions, without the need of atomic resolution measurements under vacuum. Additional ab initio calculations allow us to obtain the preferred orientation of the SAM structure relative to the MoS 2 beneath, and therefore, together with the experiments, the MoS 2 crystalline orientations at the grain boundaries. The proposed method enables the visualization of grain boundaries with sub-micrometer resolution for nanodevice investigation and failure analysis.