E. E. de Moraes, A. A. Pinto, R. J. C. Batista, A. B. de Oliveira, and H. Chacham, “Charge and Spin Current Rectification through Functionalized Boron Nitride Bilayers,” The Journal of Physical Chemistry C, pp. null, 2022. Publisher's Version
C. S. B. Weber, et al., “Rod-shaped cyanoacrylic derivatives with D-π-A architecture: synthesis, thermal, photophysical and theoretical studies,” Liquid Crystals, pp. 1-11, 2022. Publisher's Version
B. L. T. Rosa, et al., “Investigation of spatially localized defects in synthetic $\mathrmWS_2$ monolayers,” Phys. Rev. B, vol. 106, pp. 115301, 2022. Publisher's Version
A. K. M. Pinto, J. M. Pontes, M. J. S. Matos, M. S. C. Mazzoni, and S. Azevedo, “BCN diamondol-like compounds: Stability trends and electronic properties,” Computational Materials Science, vol. 215, pp. 111737, 2022. Publisher's VersionAbstract
In this work we apply first principles calculations to investigate the stability trends of mixed boron, nitrogen and carbon diamondol-like compounds. Several distinct geometric models are tested by varying the stoichiometry and position of boron and nitrogen dopants. We verify the special stability of a complete boron nitride compound – the bonitrol –, and we show that carbon substitutions in the bonitrol structure may also lead to stable systems. The electronic characterization of the resulting compounds indicates a rich phenomenology, with metallic, semimetallic, half-metallic and semiconducting behaviors.
R. de Oliveira, et al., “High throughput investigation of an emergent and naturally abundant 2D material: Clinochlore,” Applied Surface Science, vol. 599, pp. 153959, 2022. Publisher's VersionAbstract
Phyllosilicate minerals, which form a class of naturally occurring layered materials (LMs), have been recently considered as a low-cost source of two-dimensional (2D) materials. Clinochlore [Mg5Al(AlSi3)O10(OH)8] is one of the most abundant phyllosilicate minerals in nature, exhibiting the capability to be mechanically exfoliated down to a few layers. An important characteristic of clinochlore is the natural occurrence of defects and impurities which can strongly affect their optoelectronic properties, possibly in technologically interesting ways. In the present work, we carry out a thorough investigation of the clinochlore structure on both bulk and 2D exfoliated forms, discussing its optical features and the influence of the insertion of impurities on its macroscopic properties. Several experimental techniques are employed, followed by theoretical first-principles calculations considering several types of naturally-ocurring transition metal impurities in the mineral lattice and their effect on electronic and optical properties. We demonstrate the existence of requirements concerning surface quality and insulating properties of clinochlore that are mandatory for its suitable application in nanoelectronic devices. The results presented in this work provide important informations for clinochlore potential applications and establish a basis for further works that intend to optimize its properties to relevant 2D technological applications through defect engineering.
L. G. P. Martins, et al., “Electronic Band Tuning and Multivalley Raman Scattering in Monolayer Transition Metal Dichalcogenides at High Pressures,” ACS Nano, vol. 16, no. 5, pp. 8064-8075, 2022. Publisher's Version
G. A. Ferrari, et al., “Graphene nanoencapsulation action at an air/lipid interface,” Journal of Materials Science, vol. 57, no. 11, pp. 6223–6232, 2022.
G. A. Ferrari, et al., “Graphene nanoencapsulation action at an air/lipid interface,” Journal of Materials Science, pp. 1–10, 2022.
N. M. Pereira, et al., “Aerosol-Printed MoS2 Ink as a High Sensitivity Humidity Sensor,” ACS Omega, pp. null, 2022. Publisher's Version
J. A. Gonçalves, O. F. P. dos Santos, R. J. C. Batista, and S. Azevedo, “Optical properties of boron nitride nanoribbons with reconstruted edges,” Solid State Communications, pp. 114627, 2022. Publisher's VersionAbstract
In this work, we employ first-principles calculations to investigate the optical properties of boron nitride nanoribbons with reconstructed edges. We found that because of the presence of homopolar B-B and N-N bonds in the edges, such nanoribbons, unlike boron nitride nanotubes, absorb light and have non-null optical conductivity in the visible and infrared range. The stoichiometry and distribution of the homopolar bonds in the edges change the absorption, reflectance, refraction index, and optical conductivity of nanoribbons, which may allow the tuning of those properties. Regarding the absorption in the infrared and visible range, the nanoribbons with B excess are almost unaffected by the direction of light incidence. On the other hand, the direction of light incidence strongly affects the intensity of the absorption peaks of nanoribbons with N excess in the region. At ultraviolet and above non-cylindrical geometry of the ribbons with the homopolar bonds at the edges also lead to a dependence of the optical properties with the direction of light incidence.
J. A. Gonçalves, O. F. P. dos Santos, R. J. C. Batista, and S. Azevedo, “First-principle investigation of silicon carbide nanosheets fluorination: Stability trends, electronic, optical and magnetic properties,” Chemical Physics Letters, vol. 787, pp. 139266, 2022. Publisher's VersionAbstract
We employed first-principles calculations to investigate the fluorination of silicon carbide nanosheets. We found that the Si atoms are the energetically favorable adsorption sites for F atoms in silicon carbide nanosheets in all studied cases. The strain caused by the fourfold coordinated Si atoms in the flat SiC nanosheet determines the relative position of the adsorbed F atoms: occupying nearest-neighbor Si sites if they bound sheet’s opposing sides or away from each other if they are on the same side of the sheet. The fluorinated nanosheets’ electronic and magnetic properties are weakly dependent on which side of the sheet the F atoms bind; however, they are strongly dependent on the relative distance between them. For F atoms adsorbed on nearest-neighbor Si sites, the system is a small gap p-type semiconductor with 1 μB per adsorbed atom. On the other hand, if F atoms do not occupy nearest-neighbor Si sites, the system is a metal with 1/2 μB per adsorbed atom. The adsorption of F atoms strongly affects the optical properties of SiC sheets inducing optical anisotropy regarding the direction of the incidence of light.