Labtalk Article http://nanotechweb.org/ IOP

Hexagonal boron nitride (h-BN) is well suited as a substrate to form ultra-fast transistors with graphene. In many examples and prototypes that have been reported, h-BN layers are mechanically exfoliated onto silicon oxide supporting substrates. In a subsequent step, graphene layers are laid on the h-BN layer, which enables the fast carrier transport in graphene. Now, researchers at Universidade Federal de Minas Gerais, Brazil, have studied the influence of...