Achieving a Fermi level shift in graphene without an applied gate

Março 28, 2014

Labtalk Article http://nanotechweb.org/ IOP

A promising route towards nanodevice applications relies on the association of graphene with hexagonal boron nitride (hBN). Its insulating character and planarity allows graphene to reach high mobilities and improve performance. To achieve this, and reporting in Nanotechnology, researchers have analysed the role of point defects on the electronic properties of graphene/hBN compound structures.

see more: http://iopscience.iop.org/0957-4484/labtalk-article/56700

Achieving a Fermi level shift in graphene without an applied gate(a) Moiré pattern formed by graphene and boron nitride for ϕ = 9:43° (b) Side and top views of the system after oxygen incorporation into BN. Gray, blue, orange and red spheres represent carbon, nitrogen, boron and oxygen atoms, respectively.